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SiO2 sur silicium : comportement sous irradiation avec des ions lourds

Abstract : Heavy ion irradiation was performed on a-SiO2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO2 respectively. Chemical etching after irradiation gives a technical possibility to create nanopits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius.
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Contributor : Serge Bouffard <>
Submitted on : Friday, March 19, 2004 - 2:39:13 PM
Last modification on : Friday, March 5, 2021 - 3:01:49 PM
Long-term archiving on: : Wednesday, September 12, 2012 - 2:15:17 PM


  • HAL Id : tel-00005399, version 1


Cristina Rotaru. SiO2 sur silicium : comportement sous irradiation avec des ions lourds. Physique [physics]. Université de Caen, 2004. Français. ⟨tel-00005399⟩



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