Skip to Main content Skip to Navigation

Etude et modélisation du comportement électrique des transistors MOS fortement submicroniques

Abstract : Accurate MOS transistor modeling for circuit design and simulation is a constant challenge due to the continuously evolving of CMOS technology. The objective of this thesis is on the one hand to study the main effects resulting from MOSFET miniaturization and on the other hand to propose simple and original analytical models accounting for them. The physical basis necessary to the formulation of an ideal MOSFET model is presented in chapter 2. In addition, a state of the art of the most widely used compact MOSFET models (models for circuit simulation) is also discussed. Chapter 3 is devoted to a detailed study of the extrinsic capacitive behavior of deep-submicron MOSFETs. A new model of parasitic capacitances is developed and then validated by two-dimensional numerical simulations. Chapter 4 introduces a depth study of the quantization effects in both accumulation and inversion layers of n-MOS transistors. The impact of quantum effects on the various electrical characteristics (I-V, C-V) is discussed. A new fully analytical surface-potential-based MOSFET model accounting for the quantum effects is then derived in full detail. This model is valid from accumulation to inversion and does not need any fitting parameter. Within the context of a charge sheet model, it leads to an accurate and continuous description of major MOSFET electrical characteristics such as charges, capacitances, drain current, transconductance, etc. The new model is finally validated by comparison with experimental results from various advanced CMOS technologies. In conclusion, this thesis demonstrates that a pragmatic approach of compact modeling enables the development of simple, efficient and physically coherent models.
Complete list of metadata

Cited literature [110 references]  Display  Hide  Download
Contributor : Fabien Pregaldiny <>
Submitted on : Monday, January 26, 2004 - 2:33:53 PM
Last modification on : Friday, June 26, 2020 - 9:56:02 AM
Long-term archiving on: : Friday, April 2, 2010 - 7:09:05 PM


  • HAL Id : tel-00004312, version 1



Fabien Prégaldiny. Etude et modélisation du comportement électrique des transistors MOS fortement submicroniques. Micro et nanotechnologies/Microélectronique. Université Louis Pasteur - Strasbourg I, 2003. Français. ⟨tel-00004312⟩



Record views


Files downloads