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Etude théorique et expérimentale d'un convertisseur de polarisation intégré sur semiconducteur de type III-V.

Abstract : Actually, optical data rates are limited by polarization fluctuations of the guided lightwave in optical fibers. Solutions based on the polarization control utilize mainly properties of the optical fiber, liquid cristals or the lithium niobate (LiNbO3) in the case of integrated components. However, these materials are not allowed to integrate on the same chip electronics and photonics functions. Thus III-V semiconductor materials are an alternative. The objective of this work is to study theoretically and experimentally TE/TM polarization converters integrated on III-V semiconductor substrates of the GaAs family. The polarization state of the guided wave is controlled via the linear electrooptic tensor of GaAs. We showed that the application of two orthogonal electric fields in the guided wave area induced changes of the polarization state with the same efficiently as lithium niobate components. The thickness and refractive indices of different epitaxial layers were optimized in order to verify conditions imposed by the device (modal birefringence and TM optical loss lowered). Thereafter, strip-loaded waveguides were realized by use of a standard photolithographic process. Finally, results obtained from the characterization are very promising and showed that integrated semiconductor polarization controllers could be good candidates for future optical transmission systems.
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Submitted on : Tuesday, January 20, 2004 - 9:39:26 PM
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Nicolas Grossard. Etude théorique et expérimentale d'un convertisseur de polarisation intégré sur semiconducteur de type III-V.. Autre. Université de Franche-Comté, 2001. Français. ⟨tel-00004255⟩

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