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Mécanismes de formation des boîtes quantiques semiconductrices, application aux nanostructures II-VI et étude de leurs propriétés optiques

Abstract : Semiconductor quantum dot formation mechanisms, application to II-VI nanostructures(quantum wells and dots) and study of their optical properties This work presents a model for heteroepitaxial growth at equilibrium which shows the main parameters that govern strain relaxation in thin films. The effective growth mode results from the competition between plastic relaxation (with formation of dislocations at the interface) and elastic relaxation (with formation of islands on the surface). In II-VI semiconductors, the low cost in energy for forming dislocations favors plastic relaxation. A growth procedure was therefore developed that short-circuits the plastic relaxation by lowering the cost in surface energy for creating facets. This induces the formation of II-VI quantum dots, namely of CdTe on Zn(Mg)Te. These dots are studied in situ by high energy electron diffraction, atomic force microscopy and, after capping, by optical spectroscopy. Incorporation of magnesium into the barriers improves the optical properties of both quantum wells and quantum dots due to a better hole confinement. Keywords : II-VI semiconductors, molecular beam epitaxy, strain relaxation, quantum wells, quantum dots, optical spectroscopy.
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Submitted on : Thursday, December 11, 2003 - 5:45:34 PM
Last modification on : Friday, October 23, 2020 - 4:45:21 PM
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Frank Tinjod. Mécanismes de formation des boîtes quantiques semiconductrices, application aux nanostructures II-VI et étude de leurs propriétés optiques. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2003. Français. ⟨tel-00003965⟩

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