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Elaboration, cristallogénèse et caractérisations physico-chimiques des nitrures des éléments de la colonne IIIA et en particulier de GaN.

Abstract : Gallium nitride is wide band gap semi-conductor that presents a considerable interest for many applications in opto and microelectronics. However, the development of such devices is very limited due to the lack of suitable substrates. Elaboration of GaN bulk crystals becomes then a worldwide challenge and constitutes the topic of this study. In this aim, we have transposed two current processes of crystal growth: on one hand the hydrothermal crystal growth of α-quartz (using NH3 as solvent) and on the other hand, the high-pressure crystal growth of diamond (using melt LiNH2 as flux). In both cases, we have used a more ionic nutrient than GaN in order to facilitate the dissolution step. Then we have performed the synthesis of the mixed nitride Li3GaN2 through a solvothermal way. For the first approach, XPS and AES analysis have shown the feasibility for the transport and the formation of the GaN deposit through a ammonothermal route, on various substrates at moderate pressures and temperatures via a three-steps mechanism: solubilization of Li3GaN2 and formation of the GaN − 3 2 species, transport of this entity to the substrate and precipitation of GaN on this one. In the case of the second process, we have studied the nucleation of GaN, bringing out, through X-ray diffraction, the antagonistic influences of pressure and temperature and through Castaing microprobe and SEM the morphology of the precipitated micrometric grains of GaN.
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https://tel.archives-ouvertes.fr/tel-00003791
Contributor : Stéphane Toulin <>
Submitted on : Thursday, November 20, 2003 - 3:24:26 PM
Last modification on : Friday, October 23, 2020 - 4:55:44 PM
Long-term archiving on: : Friday, April 2, 2010 - 6:51:50 PM

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Annaïg Denis. Elaboration, cristallogénèse et caractérisations physico-chimiques des nitrures des éléments de la colonne IIIA et en particulier de GaN.. Matériaux. Université Sciences et Technologies - Bordeaux I, 2003. Français. ⟨tel-00003791⟩

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