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Modélisation de la diffusion des dopants dans le silicium pour la réalisation de jonctions fines

Abstract : The research topic of this dissertation deals with the modelling of a particular step of process in microelectronics: the dopant diffusion. The first part of this work is dedicated to the understanding and the readjustment of the classical model for dopant diffusion and its activation. However, those models reach their limits for simulations at very low thermal budget because of the bad description of the defect evolution created by the implant step during the annealing. The second part of this work is devoted to the understanding of the existing link between the extended defects (small clusters, \(311\) defects, dislocation loops) and the boron transient enhanced diffusion. This work consists in modeling the competitive growth of those clusters during the annealing step by using the Ostwald ripening concept in order to couple it with the dopant diffusion model. Moreover, in the case of high dose boron implantation, a new type of defects involving boron and interstitial induces an immobilization and an inactivation of the boron. In order to model the formation of those clusters, we have considered some BnIm type of clusters. Using recent ab-initio calculations from literature, we have extracted their formation energy and various charge states. This last model, coupled with the two others, has been validated using various experimental results.
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https://tel.archives-ouvertes.fr/tel-00003671
Contributor : Frédéric Boucard <>
Submitted on : Saturday, November 1, 2003 - 11:45:19 PM
Last modification on : Thursday, April 23, 2020 - 2:26:30 PM
Long-term archiving on: : Wednesday, November 23, 2016 - 3:35:59 PM

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  • HAL Id : tel-00003671, version 1

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Frédéric Boucard. Modélisation de la diffusion des dopants dans le silicium pour la réalisation de jonctions fines. Micro et nanotechnologies/Microélectronique. Université Louis Pasteur - Strasbourg I, 2003. Français. ⟨tel-00003671⟩

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