Skip to Main content Skip to Navigation
Theses

Etude des caractéristiques statiques et du bruit basse fréquence de transistors bipolaires NPN intégrés dans des procédés BiCMOS haute fréquence à simple et double polysilicium

Abstract : This manuscript is devoted to the 1st and 2nd order study of NPN bipolar transistors integrated in high frequency BiCMOS processes with the double goal of characterising the various processing technologies and bringing physical interpretations. Static characterisations and low frequency noise measurements were performed on devices integrated in three different processes (simple poly, implanted double poly and “in-situ” doped double poly). For each technology, the experimental results are interpreted by considering the specificities of each process. For the simple polysilicon technology, two cases are distinguished. For the devices with a small active area, the noise has a quadratic dependency with the bias current. In this case, the dominant noise source is located in the interfacial oxide between the single-crystal and polycrystalline silicon parts of the emitter. For the devices with a large active area, the noise is proportionnal to the base current, and the parameter quantifying this noise level is correlated to the level of the non-ideal base current measured on these devices. The noise source, in this case, is located along the non-walled periphery of the emitter-base junction. In the case of the double polysilicon technologies, the noise has a quadratic dependency with the bias current, whatever the active area of the device. However, contrary to the results reported in the literature, the normalisation by the active area does not give satisfying results. A model taking into account a variation of the interfacial oxide thickness is proposed and succesfully applied to the experimental results (static and low frequency noise) in the case of “in-situ” doped double polysilicon technology.
Complete list of metadatas

https://tel.archives-ouvertes.fr/tel-00002862
Contributor : Nicolas Valdaperez <>
Submitted on : Thursday, May 22, 2003 - 5:24:49 PM
Last modification on : Tuesday, February 5, 2019 - 12:12:10 PM
Long-term archiving on: : Friday, April 2, 2010 - 7:06:53 PM

Identifiers

  • HAL Id : tel-00002862, version 1

Citation

Nicolas Valdaperez. Etude des caractéristiques statiques et du bruit basse fréquence de transistors bipolaires NPN intégrés dans des procédés BiCMOS haute fréquence à simple et double polysilicium. Micro et nanotechnologies/Microélectronique. Université de Caen, 2002. Français. ⟨tel-00002862⟩

Share

Metrics

Record views

286

Files downloads

3980