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Pulvérisation cathodique assistée par ordinateur

Abstract : The sputtering technique is one of the most used methods for thin film deposition. This method presents a lot of advantages, but it is delicate to put into operation in the case of thin films of alloys because it is very difficult to control the chemical composition. In order to solve this problem we have designed and realised a triode-multitarget-sputtering device controlled by computer. This equipment is capable of deposing a thin film with a chemical composition defined to better than 0.4%. It allows us to control the chemical composition of a single atomic monolayer. The device consists of four parts : control of plasma, control of the deposition rate, fast sequencing of target polarisation, and calculation as well as analysis and correction of sputtering yield. The deposition rate is obtained by measuring a 16 MHz quartz resonance frequency, thanks to a counting chain connected to the computer. By using a digital vernier device, on the one hand we have increased the reading rate, in order to value and subtract the temperature drift of the quartz, on the other hand we have improved the resolution (10 picogramms per second) which allows us to detect one thousandth of an atomic layer in a counting time of 100 milliseconds. This has been used to perform a dynamic adjustment of the chemical composition during the sputtering process, by controlling the target polarisation with the computer. This equipment has been used for manufacturing bolometric thin films covering a very large temperature range
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Yan Mei Jiang. Pulvérisation cathodique assistée par ordinateur. Matière Condensée [cond-mat]. Université Paris Sud - Paris XI, 1992. Français. ⟨tel-00002739⟩

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