Luminescence and recombination in hydrogenated amorphous silicon, Advances in Physics, vol.43, issue.5, pp.593-676, 1981. ,
DOI : 10.1063/1.323553
Quantum confined luminescence in Si/SiO 2 superlattices, Phys. Rev. B, vol.76, pp.3-539, 1996. ,
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Applied Physics Letters, vol.57, issue.10, pp.1046-1048, 1990. ,
DOI : 10.1063/1.103561
Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon, Physical Review B, vol.54, issue.4, pp.2548-2555, 1996. ,
DOI : 10.1103/PhysRevB.54.2548
Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon, Applied Physics Letters, vol.61, issue.5, pp.563-565, 1992. ,
DOI : 10.1063/1.107837
excitation: An alternate mechanism for porous Si photoluminescence, Physical Review B, vol.45, issue.23, pp.13788-13791, 1992. ,
DOI : 10.1103/PhysRevB.45.13788
Electronic transport in crystalline siloxene, Solid State Communications, vol.102, issue.5, pp.365-368, 1997. ,
DOI : 10.1016/S0038-1098(97)00010-0
Electroluminescence studies in silicon dioxide films containing tiny silicon islands, Journal of Applied Physics, vol.56, issue.2, p.401, 1984. ,
DOI : 10.1063/1.333979
Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing, Thin solid films, pp.104-107, 1996. ,
Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation, Journal of Luminescence, vol.80, issue.1-4, pp.235-239, 1999. ,
DOI : 10.1016/S0022-2313(98)00104-5
Photoluminescence studies of light emission from silicon implanted and annealed SiO 2 layers, Thin Solid Films, pp.88-91, 1996. ,
Structure and optical properties of amorphous SiOx thin films prepared by co-evaporation of Si and SiO, Materials Science and Engineering: B, vol.69, issue.70, pp.69-70, 2000. ,
DOI : 10.1016/S0921-5107(99)00276-7
Silicon dots/clusters in silicon nitride : photoluminescence and electron spin resonance, Thin Solid Films, pp.20-24, 1999. ,
Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell, Physical Review B, vol.48, issue.7, pp.4883-4886, 1993. ,
DOI : 10.1103/PhysRevB.48.4883
Photoluminescence mechanism in surface-oxidized silicon nanocrystals, Physical Review B, vol.55, issue.12, pp.7375-7378, 1997. ,
DOI : 10.1103/PhysRevB.55.R7375
Fabrication and optical properties of Si/CaF2(111) multi-quantum wells, Journal of Applied Physics, vol.79, issue.8, pp.4066-4071, 1996. ,
DOI : 10.1063/1.361834
MBE Growth of Si/CaF2 Nanostructures: Photoluminescence and Absorption Properties, physica status solidi (a), vol.67, issue.118, pp.49-55, 1998. ,
DOI : 10.1002/(SICI)1521-396X(199801)165:1<49::AID-PSSA49>3.0.CO;2-L
Improvement in the luminescence properties of Si/CaF 2 nanostructures, pp.340-34423, 2000. ,
Thèse de doctorat de l'université d'Aix-Marseille 2, Elaboration et propriétés de photoluminescence de multi-puits quantiques Si, 1996. ,
Thèse de doctorat de l'université Joseph Fourier, Propriétés optiques et électriques des nanostructures de Si, 1999. ,
Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): Effect of rapid thermal annealing, Journal of Luminescence, vol.80, issue.1-4, pp.253-256, 1999. ,
DOI : 10.1016/S0022-2313(98)00107-0
Le vide -Les couches minces -Les couches dures ,
Thèse de doctorat de l'université d'Aix-Marseille 2, Etude des propriétés électriques de films ultraminces d'oxynitrure de silicium de composition variable par greffage de monocouches organiques superisolantes, 2000. ,
Organic insulating films of nanometer thicknesses, Applied Physics Letters, vol.69, issue.11, pp.1646-1648, 1996. ,
DOI : 10.1063/1.117444
Heteroepitaxy of calcium fluoride on Si(100), (111) and (110) silicon sufaces, Mat. Res. Soc. Symp. Proc, vol.37, pp.151-156, 1985. ,
Molecular beam epitaxial growth of low dimensional silicon structures embedded in CaF 2 , Thin Solid Films, pp.179-182, 1997. ,
and Si, Applied Physics Letters, vol.40, issue.1, pp.66-68, 1982. ,
DOI : 10.1063/1.92927
on Si(111), Applied Physics Letters, vol.60, issue.3, pp.338-340, 1992. ,
DOI : 10.1063/1.106650
URL : https://hal.archives-ouvertes.fr/hal-01264135
on Si(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.4, pp.769-774, 1992. ,
DOI : 10.1116/1.578161
URL : https://hal.archives-ouvertes.fr/hal-01264135
Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxy, Journal of Crystal Growth, vol.148, issue.1-2, pp.133-139, 1995. ,
DOI : 10.1016/0022-0248(94)00869-8
Bonding at the CaF 2 /Si(111) interface from tight-binding clusters and band theory, Phys. Rev. B, vol.38, p.12, 1988. ,
Structural transformations at CaF 2 /Si(111) interfaces, Appl. Surf. Sc, vol.104105, pp.402-408, 1996. ,
High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface, Journal of Crystal Growth, vol.169, issue.1, pp.40-50, 1996. ,
DOI : 10.1016/0022-0248(96)00346-6
Structural change and heteroepitaxy induced by rapid thermal annealing of CaF2 films on Si(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.4, pp.2437-2441, 1998. ,
DOI : 10.1116/1.581363
Molecular beam epitaxial growth of thin CaF 2 films on vicinal Si(111) surfaces, Appl. Surf. Sc, vol.104105, pp.409-416, 1995. ,
Growth of CaF2 on Si(111): Imaging of the CaF interface by friction force microscopy, Applied Physics Letters, vol.73, issue.14, pp.1967-196924, 1998. ,
DOI : 10.1063/1.122337
Si(111) for a two-steps deposition, Growth kinetics of CaF Phys. Rev. B, vol.2, issue.62, pp.2158-2162, 1999. ,
Observation of triangular terraces and triangular craters of CaF2 film on Si(1 1 1) substrate, Applied Surface Science, vol.190, issue.1-4, pp.80-87, 2002. ,
DOI : 10.1016/S0169-4332(01)00843-1
Epitaxy of atomically flat CaF 2 films on Si(111) substrates, à paraître dans Thin Solid Films, 2002. ,
Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF ,
Heteroepitaxy of semiconductor-on-insulator structures:Si and Ge on CaF, J, issue.2111 ,
/Si structures with thin Si layers predeposited at room temperature, Journal of Applied Physics, vol.55, issue.10, pp.3566-357025, 1984. ,
DOI : 10.1063/1.332947
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE, Journal of The Electrochemical Society, vol.133, issue.4, p.666, 1986. ,
DOI : 10.1149/1.2108651
on Si(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.4, pp.769-774, 1992. ,
DOI : 10.1116/1.578161
URL : https://hal.archives-ouvertes.fr/hal-01264135
Thèse de doctorat de l'université d'Aix-Marseille 2, Elaboration et propriétés de photoluminescence de multi-puits quantiques Si, 1996. ,
Thèse de doctorat de l'université Joseph Fourier, Propriétés optiques et électriques des nanostructures de Si, 1999. ,
Effects of electron irradiation on the structure and morphology of CaF, Appl. Surf. Sc, vol.2, issue.111, pp.162-163310, 2000. ,
Observation of triangular terraces and triangular craters of CaF2 film on Si(1 1 1) substrate, Applied Surface Science, vol.190, issue.1-4, pp.80-87, 2002. ,
DOI : 10.1016/S0169-4332(01)00843-1
Atomic structures of Si(111) surface during silicon epitaxial growth, Journal of Crystal Growth, vol.163, issue.1-2, pp.39-47, 1996. ,
DOI : 10.1016/0022-0248(95)01036-X
on Si(111), Physical Review B, vol.57, issue.19, pp.12443-12447, 1998. ,
DOI : 10.1103/PhysRevB.57.12443
Si(111) for a two-steps deposition, Growth kinetics of CaF Phys. Rev. B, vol.2, issue.62, pp.2158-2162, 1999. ,
Epitaxy of atomically flat CaF 2 films on Si(111) substrates, à paraître dans Thin Solid Films, 2002. ,
Growth mode characterisation of CaF2 grown on vicinal Si(111) substrates by molecular beam epitaxy, Journal of Crystal Growth, vol.148, issue.1-2, pp.133-139, 1995. ,
DOI : 10.1016/0022-0248(94)00869-8
on Si, Journal of Applied Physics, vol.58, issue.1, pp.302-308, 1985. ,
DOI : 10.1063/1.335676
on Si(111) determined by x???ray photoelectron diffraction, Applied Physics Letters, vol.62, issue.17, pp.2057-2059, 1993. ,
DOI : 10.1063/1.109478
CaF 2 -Si(111) as a model ionic-covalent system : Transition from chemisorption to epitaxy, Phys. Rev. B, vol.48, pp.85716-5719, 1993. ,
Molecular beam epitaxial growth of thin CaF 2 films on vicinal Si(111) surfaces, Appl. Surf. Sc, vol.104105, pp.409-416, 1995. ,
Structural transformations at CaF 2 /Si(111) interfaces, Appl. Surf. Sc, vol.104105, pp.402-408, 1995. ,
Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy, Applied Surface Science, vol.156, issue.1-4, pp.85-96, 2000. ,
DOI : 10.1016/S0169-4332(99)00364-5
Handbook of Auger Electron Spectroscopy ,
on Si(111) by low???energy electron beam for over growth of GaAs films, Journal of Applied Physics, vol.75, issue.5, pp.2307-2310, 1994. ,
DOI : 10.1063/1.356272
on Si, Applied Physics Letters, vol.45, issue.8, pp.907-909, 1984. ,
DOI : 10.1063/1.95410
URL : https://hal.archives-ouvertes.fr/hal-00549999
A comparative study of the electrical properties of epitaxial fluorides, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.3 ,
DOI : 10.1116/1.575704
MIS characterization and modeling of the electrical properties of the epitaxial Caf2/Si(111) interface, Journal of Electronic Materials, vol.44, issue.3, pp.169-175, 1987. ,
DOI : 10.1007/BF02655482
Physcis of semiconductor devices, p.362, 1981. ,
on Si(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.4, pp.769-774, 1992. ,
DOI : 10.1116/1.578161
URL : https://hal.archives-ouvertes.fr/hal-01264135
Electrical characterization of the CaF 2 /Si epitaxial insulator/semiconductor interface by MIS admittance, Mat. Res. Soc. Symp. Proc, vol.35, 1985. ,
Improving the structural and electrical properties of epitaxial CaF 2 on Si by rapid thermal annealing, Mat. Res. Soc. Symp. Proc, vol.53, 1986. ,
on Si(111), Applied Physics Letters, vol.60, issue.3, pp.338-340, 1992. ,
DOI : 10.1063/1.106650
URL : https://hal.archives-ouvertes.fr/hal-01264135
Thèse de doctorat de l'université Joseph Fourier, Propriétés optiques et électriques des nanostructures de Si, 1999. ,
Electroluminescence from Si/CaF2 Multilayers Grown by Molecular Beam Epitaxy, physica status solidi (a), vol.165, issue.1, pp.97-103, 1998. ,
DOI : 10.1002/(SICI)1521-396X(199801)165:1<97::AID-PSSA97>3.0.CO;2-N
Light-emitting structures based on nanocrystalline (Si/CaF2) multiquantum wells, Journal of Luminescence, vol.80, issue.1-4, p.81, 1999. ,
DOI : 10.1016/S0022-2313(98)00073-8
Vertical electrical transport in Si/CaF 2 nanocrystalline heterostructures, Mat. Sc. Eng. B, pp.69-70464, 2000. ,
Charge Carrier Transport in Si/CaF2 Heterostructures Controlled by Forming Bias, physica status solidi (a), vol.44, issue.2, pp.561-568, 2000. ,
DOI : 10.1002/1521-396X(200010)181:2<561::AID-PSSA561>3.0.CO;2-T
Carrier dynamics modeling in a precharged Si/CaF 2 heterostructure, J. Appl. Phys, vol.89, pp.9-109, 2001. ,
Thèse de doctorat de l'université d'Aix-Marseille 2, Elaboration et propriétés de photoluminescence de multi-puits quantiques Si, 1996. ,
Thèse de doctorat de l'université Joseph Fourier, Propriétés optiques et électriques des nanostructures de Si, 1999. ,
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Applied Physics Letters, vol.57, issue.10, pp.1046-1048, 1990. ,
DOI : 10.1063/1.103561
Fabrication and optical properties of Si/CaF2(111) multi-quantum wells, Journal of Applied Physics, vol.79, issue.8, pp.4066-4071, 1996. ,
DOI : 10.1063/1.361834
MBE Growth of Si/CaF2 Nanostructures: Photoluminescence and Absorption Properties, physica status solidi (a), vol.67, issue.118, pp.49-55, 1998. ,
DOI : 10.1002/(SICI)1521-396X(199801)165:1<49::AID-PSSA49>3.0.CO;2-L
Improvement in the luminescence properties of Si/CaF 2 nanostructures, Mat. Sc. Eng. B, pp.69-70340, 2000. ,
Quantum confined luminescence in Si/SiO 2 superlattices, Phys. Rev. B, vol.76, pp.3-539, 1996. ,
Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon, Physical Review B, vol.54, issue.4, pp.2548-2555, 1996. ,
DOI : 10.1103/PhysRevB.54.2548
Enhancement of adsorbate vibrations due to interaction with microcavity mode in porous silicon superlattice, Surface Science, vol.427, issue.428, pp.235-238, 1999. ,
DOI : 10.1016/S0039-6028(99)00271-X
Optical properties of multilayered porous silicon, Materials Science and Engineering: B, vol.69, issue.70, pp.69-70, 2000. ,
DOI : 10.1016/S0921-5107(99)00261-5
URL : https://hal.archives-ouvertes.fr/hal-00272406
All porous silicon microcavities: growth and physics, Journal of Luminescence, vol.80, issue.1-4, pp.43-52, 1999. ,
DOI : 10.1016/S0022-2313(98)00069-6
Visible light emission from Si/SiO2 multilayers in planar microcavities, Physica E: Low-dimensional Systems and Nanostructures, vol.6, issue.1-4, pp.201-204, 2000. ,
DOI : 10.1016/S1386-9477(99)00085-5
Photoluminescence from (Si/SiO 2 ) n superlattices and their use as emitters in ,
Luminescence properties of Si nanocrystals embedded in optical microcavities, Materials Science and Engineering: C, vol.19, issue.1-2, pp.377-381, 2002. ,
DOI : 10.1016/S0928-4931(01)00424-6
Luminescence properties of amorphous silicon-nitride-based optical microcavities, Journal of Non-Crystalline Solids, vol.299, issue.302, pp.299-302653, 2002. ,
DOI : 10.1016/S0022-3093(01)01028-6
GaAs absorber layer growth for broadband AlGaAs/fluoride SESAMs, Journal of Crystal Growth, vol.227, issue.228, pp.172-176133, 2001. ,
DOI : 10.1016/S0022-0248(01)00658-3