Pushing the limits of lithography, Nature, vol.406, issue.6799, pp.1027-1031, 2000. ,
DOI : 10.1038/35023233
Modeling of 10-nm-scale ballistic MOSFET's, IEEE Electron Device Letters, vol.21, issue.5, pp.242-244, 2000. ,
DOI : 10.1109/55.841309
Single-electron devices and their applications, Proc. IEEE, pp.606-632, 1999. ,
DOI : 10.1109/5.752518
A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths, Physica, vol.17, issue.8, pp.777-780, 1951. ,
DOI : 10.1016/0031-8914(51)90098-5
Superconductivity of Small Tin Particles Measured by Tunneling, Physical Review Letters, vol.20, issue.26, pp.1504-1507, 1968. ,
DOI : 10.1103/PhysRevLett.20.1504
Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands, Applied Physics Letters, vol.74, issue.20 ,
DOI : 10.1063/1.124060
Fabrication and physics of 2 nm islands for single electron devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.13, issue.6, p.2883, 1995. ,
DOI : 10.1116/1.588310
Fabrication etétudeet´etétude de dispositifsàdispositifs`dispositifsà blocage de Coulomb réalisés en combinant le dépôt de films granulaires d'or et la lithographié electroniquè a très haute résolution ,
Introduction to Single Charge Tunneling, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.1-20, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_1
Charge Tunneling Rates in Ultrasmall Junctions, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.21-108, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_2
Single-electron tunneling, pp.149-212, 1998. ,
characteristics of coupled ultrasmall-capacitance normal tunnel junctions, Physical Review B, vol.37, issue.1, p.98, 1988. ,
DOI : 10.1103/PhysRevB.37.98
Monte Carlo methods in statistical physics, 1999. ,
Charge solitons in 1-D array of mesoscopic tunnel junctions, Physics Letters A, vol.142, issue.6-7, p.431, 1989. ,
DOI : 10.1016/0375-9601(89)90397-6
Single-electron solitons in one-dimensional tunnel structures, Sov. Phys. JETP, issue.3, pp.68-581, 1989. ,
Single-Electron Effects in Arrays of Normal Tunnel Junctions, Europhysics Letters (EPL), vol.10, issue.8, p.765, 1989. ,
DOI : 10.1209/0295-5075/10/8/011
Statics and dynamics of single-electron solitons in two-dimensional arrays of ultrasmall tunnel junctions, Physica B: Condensed Matter, vol.173, issue.3, p.319, 1991. ,
DOI : 10.1016/0921-4526(91)90098-Y
Frequency-locked turnstile device for single electrons, Physical Review Letters, vol.64, issue.22, p.2691, 1990. ,
DOI : 10.1103/PhysRevLett.64.2691
Correlated discrete transfer of single electrons in ultrasmall tunnel junctions, IBM Journal of Research and Development, vol.32, issue.1, p.144, 1988. ,
DOI : 10.1147/rd.321.0144
Complementary digital logic based on the ??????Coulomb blockade??????, Journal of Applied Physics, vol.72, issue.9, pp.4399-4413, 1992. ,
DOI : 10.1063/1.352206
Simulation of single-electron logic circuits, Electronics and Communications in Japan (Part II: Electronics), vol.63, issue.9, p.65, 1994. ,
DOI : 10.1002/ecjb.4420770908
Simple and Stable Single-Electron Logic Utilizing Tunnel-Junction Load, Japanese Journal of Applied Physics, vol.34, issue.Part 1, No. 2B, p.1345, 1995. ,
DOI : 10.1143/JJAP.34.1345
Single???electron transistor logic, Applied Physics Letters, vol.68, issue.14, 1954. ,
DOI : 10.1063/1.115637
A single-electron device and circuit simulator, Superlattices and Microstructures, vol.21, issue.1, p.37, 1997. ,
DOI : 10.1006/spmi.1996.0138
Thermometry by Arrays of Tunnel Junctions, Physical Review Letters, vol.73, issue.21, p.2903, 1994. ,
DOI : 10.1103/PhysRevLett.73.2903
Arrays of normal metal tunnel junctions in weak Coulomb blockade regime, Applied Physics Letters, vol.67, issue.14, pp.67-2096, 1995. ,
DOI : 10.1063/1.115090
Numerical investigation of one???dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime, Journal of Applied Physics, vol.80, issue.1, p.256, 1996. ,
DOI : 10.1063/1.362813
One dimensional arrays and solitary tunnel junctions in the weak coulomb blockade regime: CBT thermometry, Journal of Low Temperature Physics, vol.95, issue.1-2, p.191, 1997. ,
DOI : 10.1007/BF02396821
Practical aspects and experiences Scalable massively parallel algorithms for computational nanoelectronics, Parallel Computing, vol.22, issue.14, pp.1931-1963, 1997. ,
DOI : 10.1016/S0167-8191(96)00069-5
A numerical study of the dynamics and statistics of single electron systems, Journal of Applied Physics, vol.78, issue.5, p.3238, 1995. ,
DOI : 10.1063/1.360752
A numerical study of the accuracy of single???electron current standards, Journal of Applied Physics, vol.79, issue.12, p.9155, 1996. ,
DOI : 10.1063/1.362587
Optimization of the master equation set for a multidot tunnel structure, The European Physical Journal Applied Physics, vol.7, issue.2, p.137, 1999. ,
DOI : 10.1051/epjap:1999208
Introduction to single charge tunneling, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.1-20, 1992. ,
Charge Tunneling Rates in Ultrasmall Junctions, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.21-108, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_2
Single-electron tunneling, pp.149-212, 1998. ,
Strong charge fluctuations in the singleelectron box : a quantum Monte Carlo analysis, Phys. Rev. B, issue.8, pp.59-5728, 1999. ,
Transferring Electrons One By One, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.109-138, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_3
Charge fluctuations in the single-electron box: Perturbation expansion in the tunneling conductance, Physical Review B, vol.50, issue.23, p.17364, 1994. ,
DOI : 10.1103/PhysRevB.50.17364
Coulomb blockade and an electron in a mesoscopic box, American Journal of Physics, vol.64, issue.3, p.343, 1996. ,
DOI : 10.1119/1.18246
Direct measurement of the destruction of charge quantization in a single-electron box, Applied Physics Letters, vol.74, issue.7 ,
DOI : 10.1063/1.123450
77 K single electron transistors fabricated with 0 ,
Vertical Single Electron Transistors With Separate Gates, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 6B, p.4151, 1997. ,
DOI : 10.1143/JJAP.36.4151
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor, Applied Physics Letters, vol.73, issue.21 ,
DOI : 10.1063/1.122695
Metallic resistively coupled single-electron transistor, Applied Physics Letters, vol.74, issue.1, p.132, 1999. ,
DOI : 10.1063/1.122973
Physique des semiconducteurs et des composantsélectriquescomposants´composantsélectriques, pp.102-108, 1996. ,
Solid State Physics, pp.362-364, 1987. ,
Electrostatique :probì emes généraux des conducteurs, pp.207-210, 1966. ,
Electron transport in metallic dot arrays: Effect of a broad dispersion in the tunnel junction dimensions, Journal of Applied Physics, vol.84, issue.7, pp.3756-3763, 1998. ,
DOI : 10.1063/1.368554
Mécanique quantique " , volume I, pp.32-4068, 1996. ,
Quantum Mechanics, pp.92-112, 1998. ,
Basic Concepts of Tunneling, Tunneling phenomena in solids, chapitre 1, pp.1-12, 1969. ,
DOI : 10.1007/978-1-4684-1752-4_1
Tunneling in solids. Solid state physics, 1969. ,
A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-application to quantum well structures, IEEE Journal of Quantum Electronics, vol.24, issue.8, pp.1524-1531, 1988. ,
DOI : 10.1109/3.7079
Solving the Schrodinger equation in arbitrary quantum-well potential profiles using the transfer matrix method, IEEE Journal of Quantum Electronics, vol.26, issue.11, pp.2025-2035, 1990. ,
DOI : 10.1109/3.62122
Quantum Mechanics, pp.113-134, 1998. ,
Mécanique quantique, pp.194-203, 1965. ,
Mécanique quantique, volume II, 1996. ,
Notes on quantum mechanics : a course given at the University of Chicago Facsimile reproduction of a manuscript, 1961. ,
InitiationàInitiation`Initiationà la physique du solide : exercices commentés, pp.257-262, 1994. ,
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film, Journal of Applied Physics, vol.34, issue.6, p.1793, 1963. ,
DOI : 10.1063/1.1702682
Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction, IBM Journal of Research and Development, vol.1, issue.3, pp.223-231, 1957. ,
DOI : 10.1147/rd.13.0223
Generalized many-channel conductance formula with application to small rings, Physical Review B, vol.31, issue.10, pp.31-6207, 1985. ,
DOI : 10.1103/PhysRevB.31.6207
A treatise on the theory of Bessel functions. Cambridge mathematical library, 1995. ,
Single-Electron Effects in Arrays of Normal Tunnel Junctions, Europhysics Letters (EPL), vol.10, issue.8, p.765, 1989. ,
DOI : 10.1209/0295-5075/10/8/011
Charge solitons in 1-D array of mesoscopic tunnel junctions, Physics Letters A, vol.142, issue.6-7, p.431, 1989. ,
DOI : 10.1016/0375-9601(89)90397-6
Tunneling time and offset charge in small tunnel junctions, Physica B, vol.165, pp.973-974, 1990. ,
Electron???electron interaction in linear arrays of small tunnel junctions, Applied Physics Letters, vol.67, issue.20, p.3037, 1995. ,
DOI : 10.1063/1.115446
Full capacitance matrix of coupled quantum dot arrays: Static and dynamical effects, Applied Physics Letters, vol.68, issue.21, p.2996, 1996. ,
DOI : 10.1063/1.116675
Electron transport in metallic dot arrays : Effect of a broad dispersion in the tunnel junction dimensions, J. Appl. Phys, vol.84, issue.7, pp.3756-3763, 1998. ,
Single-electron devices and their applications, Proc. IEEE, pp.606-632, 1999. ,
DOI : 10.1109/5.752518
Single-Electron Pump Based on Charging Effects, Europhysics Letters (EPL), vol.17, issue.3, p.249, 1992. ,
DOI : 10.1209/0295-5075/17/3/011
SIMON-A simulator for single-electron tunnel devices and circuits, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.16, issue.9, p.937, 1997. ,
DOI : 10.1109/43.658562
Influence of charge disorder in networks of small tunnel junctions " . Czech, J. Phys, vol.46, p.2361, 1996. ,
Practical aspects and experiences Scalable massively parallel algorithms for computational nanoelectronics, Parallel Computing, vol.22, issue.14, pp.1931-1963, 1997. ,
DOI : 10.1016/S0167-8191(96)00069-5
Introduction to Single Charge Tunneling, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.1-20, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_1
Single-electron tunneling effects in granular metal films, Physical Review B, vol.50, issue.12, pp.50-8661, 1994. ,
DOI : 10.1103/PhysRevB.50.8961
Charge Tunneling Rates in Ultrasmall Junctions, Single charge tunneling : Coulomb blockade phenomena in nanostructure, pp.21-108, 1992. ,
DOI : 10.1007/978-1-4757-2166-9_2
A numerical study of the dynamics and statistics of single electron systems, Journal of Applied Physics, vol.78, issue.5, p.3238, 1995. ,
DOI : 10.1063/1.360752
A numerical study of the accuracy of single???electron current standards, Journal of Applied Physics, vol.79, issue.12, p.9155, 1996. ,
DOI : 10.1063/1.362587
Optimization of the master equation set for a multidot tunnel structure, The European Physical Journal Applied Physics, vol.7, issue.2, p.137, 1999. ,
DOI : 10.1051/epjap:1999208
characteristics of coupled ultrasmall-capacitance normal tunnel junctions, Physical Review B, vol.37, issue.1, p.98, 1988. ,
DOI : 10.1103/PhysRevB.37.98
Single-electron solitons in one-dimensional tunnel structures, Sov. Phys. JETP, issue.3, pp.68-581, 1989. ,
Simulation of single-electron logic circuits, Electronics and Communications in Japan (Part II: Electronics), vol.63, issue.9, p.65, 1994. ,
DOI : 10.1002/ecjb.4420770908
Numerical investigation of one???dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime, Journal of Applied Physics, vol.80, issue.1, pp.256-68, 1954. ,
DOI : 10.1063/1.362813
Simulations of Relaxation Processes for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 6B ,
DOI : 10.1143/JJAP.36.4176
Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays, Journal of Applied Physics, vol.84, issue.10, p.5603, 1998. ,
DOI : 10.1063/1.368607
Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands ,
Temperature behavior of multiple tunnel junction devices based on disordered dot arrays, Journal of Applied Physics, vol.87, issue.1, pp.345-352, 2000. ,
DOI : 10.1063/1.371867
Suppression of large current fluctuations in 2D nanometer-size multijunctions, -2), pp.25-27, 2001. ,
DOI : 10.1016/S0928-4931(01)00210-7
Background charge noise in metallic single-electron tunneling devices, Physical Review B, vol.53, issue.20, pp.53-13682, 1996. ,
DOI : 10.1103/PhysRevB.53.13682
Noise in the Coulomb blockade electrometer, Noise in the Coulomb blockade electrometer, pp.237-239, 1992. ,
DOI : 10.1063/1.108195
Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire, Journal of Applied Physics, vol.81, issue.6, pp.2699-2703, 1997. ,
DOI : 10.1063/1.363934
The effect of offset charge deposited directly onto single-electron devices, Applied Physics Letters, vol.72, issue.25, pp.3350-3352, 1998. ,
DOI : 10.1063/1.121600
Electron transport in metallic dot arrays: Effect of a broad dispersion in the tunnel junction dimensions, Journal of Applied Physics, vol.84, issue.7, pp.3756-3763, 1998. ,
DOI : 10.1063/1.368554
Variance analysis of the Coulomb blockade parameters in nanometer-size disordered arrays, Journal of Applied Physics, vol.90, issue.2, pp.953-957, 2001. ,
DOI : 10.1063/1.1381555
Reduction of the threshold voltage dispersion in nanometer-sized arrays showing Coulomb blockade, Materials Science and Engineering: C, vol.15, issue.1-2, pp.49-51, 2001. ,
DOI : 10.1016/S0928-4931(01)00305-8