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Theses

Transport électronique dans les nanostructures fortement désordonnées

Yann Leroy
Abstract : The aim of this thesis was to study the validity of a new approach to develop ultimate electronics devices, by means of numerical simulations. Such devices should be able to control single electron motion; therefore, a large threshold voltage is required even at room temperature. Nevertheless, this constraint raises a lot of difficulties in the elaboration of single electron transistors (SET) with a single dot. So, we decided to work on nanometer-sized metallic dot arrays, placed between leads on an insulator, in collaboration with an experimental team. Those devices present a high geometrical disorder taken into account in the inter-dot distances. First, we built up a Monte Carlo simulator which reproduces electron motion through our devices. It has been validated by comparison with the experiments. To be able to explicitely include the disorder, we modelized tunnel resistances and junction capacitances between dots in a realistic way. Secondly, we estimated the effect of disorder on electrical characteristics. The main result was the magnitude of the threshold voltage dispersion. It is small at low temperature, but it increases dramatically in the temperature range relevant for applications. In order to reduce this dispersion in the higher temperature range, we have proposed and tested numerically a realistic solution which is able to keep the threshold value in a acceptable range for VLSI use.
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Submitted on : Wednesday, November 20, 2002 - 11:01:30 AM
Last modification on : Wednesday, November 20, 2002 - 11:01:30 AM
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  • HAL Id : tel-00001987, version 1

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Yann Leroy. Transport électronique dans les nanostructures fortement désordonnées. Physique [physics]. Université Louis Pasteur - Strasbourg I, 2001. Français. ⟨tel-00001987⟩

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