Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium

Abstract : This PhD work focuses on the structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon. Amongst the integration approaches of III-V on Si, the interest of GaP/Si is firstly discussed. A study of the growth and the doping of AlGaP used as laser cladding layers (optical confinement and electrical injection) is presented. The activation complexity of n-dopants is highlighted. Then, the photoluminescence properties of InGaAs/GaP quantum dots are investigated as a function of temperature and optical density. The origin of the optical transitions involved are identified as (i) indirect type-I transition between electrons in Xxy states and holes in HH states of quantum dots InGaAs and (ii) indirect type-II with electrons in Xz states of strained GaP. Despite an effective modification in the electronic structure of these emitters, a direct type I optical transition is not demonstrated. This is the major bottleneck in the promotion of GaP based emitters on Si. This said, the control of the GaP/Si interface and electrical injection are confirmed by the demonstration of electroluminescence at room temperature on Si. If no laser effect is obtained in rib laser architectures, a possible beginning of Г band filling in QDs is discussed. Finally, the adequacy of state of the art integrated lasers with the development of on-chip optical interconnects is discussed.
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https://hal.archives-ouvertes.fr/tel-02100960
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Submitted on : Thursday, May 9, 2019 - 11:00:33 AM
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  • HAL Id : tel-02100960, version 2

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Ronan Tremblay. Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium. Optique / photonique. INSA de Rennes, 2018. Français. ⟨NNT : 2018ISAR0026⟩. ⟨tel-02100960v2⟩

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