Skip to Main content Skip to Navigation
Journal articles

Gate Tunable Vertical Geometry Phototransistor based on Infrared HgTe Nanocrystals

Abstract : Infrared nanocrystals are promising building blocks for the design of low-cost infrared sensors. Vertical geometry diode is, among possible geometries, the one that lead to the best performance so far. However, this geometry suffers from a lack of tunability after its fabrication, slowing down possible improvements. Here, we demonstrate gate control on a vertical diode in which the active layer is made of HgTe NCs absorbing in the extended shortwave infrared (2.5 µm). To reach this goal, we take advantage of the electrostatic transparency of graphene, combined with the high capacitance LaF3 ionic glass to design a gate tunable photodiode. The latter behaves as a work-function-tunable electrode which lets the gate-induced electric field tune the carrier density in the nanocrystal film. In particular, we show that the gate allows to tune the band profile leading to more efficient charge extraction and thus an enhanced photoresponse (x4 compared to the device with floating gate). This work also demonstrates that photoelectron extraction can still be improved in the existing diode, by better controlling the doping profile of the diode.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03086952
Contributor : emmanuel lhuillier Connect in order to contact the contributor
Submitted on : Wednesday, December 23, 2020 - 9:31:30 AM
Last modification on : Sunday, June 26, 2022 - 3:01:51 AM

File

diodegraphene_v26.pdf
Files produced by the author(s)

Identifiers

Citation

Charlie Gréboval, Ulrich Nguétchuissi Noumbé, Audrey Chu, Yoann Prado, Adrien Khalili, et al.. Gate Tunable Vertical Geometry Phototransistor based on Infrared HgTe Nanocrystals. Applied Physics Letters, American Institute of Physics, 2020, 117 (25), pp.251104. ⟨10.1063/5.0032622⟩. ⟨hal-03086952⟩

Share

Metrics

Record views

67

Files downloads

131