282 articles – 2128 Notices  [english version]
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Experimental demonstration of pattern influence on DRAM SEU and SEFI radiation sensitivities
Bougerol A. et al
IEEE Transactions on Nuclear Science 58, 3, part 2, June (2011) 1032-1039 - http://hal.archives-ouvertes.fr/hal-00644126
A. Bougerol1, F. Miller1, N. Guibbaud2, R. Leveugle3, T. Carriere1, N. Buard1
1 :  EADS, Corporate Research Center
http://www.eads.com
EADS Paris
EADS France S.A.S. · 37, boulevard de Montmorency · 75781 Paris Cedex 16 ·
France
2 :  APTUS - APTUS
http://www.aptus.fr/
Société privée
77 Rue des Chantiers 78000 Versailles
France
3 :  TIMA - Techniques of Informatics and Microelectronics for integrated systems Architecture
http://tima.imag.fr/
CNRS : UMR5159 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG)
46 Av Félix Viallet 38031 GRENOBLE CEDEX 1
France
Sciences de l'ingénieur/Micro et nanotechnologies/Microélectronique
Experimental demonstration of pattern influence on DRAM SEU and SEFI radiation sensitivities
Thanks to laser and accelerator tests, we investigated the influence of test patterns regarding both SEU and SEFI radiation sensitivities for several DRAM technology nodes, from 210 to 90 nm. Regarding SEUs, we demonstrated that preponderant physical mechanisms vary with technology nodes, so patterns revealing worst-case SEU sensitivity vary as well. Regarding SEFIs, and in particular SEFLUs (Single Event Fuse-Latch Upsets), we shown that the pattern choice has also an influence on their detection rate during accelerator tests due to masking effects. Consequently, non-repetitive patterns, like "Random", appear the most appropriate to evaluate cutting-edge DRAMs as all Cell-Upset modes are uniformly spread, and all addressing errors are detected.
Anglais

10.1109/TNS.2011.2107528
IEEE Transactions on Nuclear Science
internationale
2011
58
3, part 2, June
1032-1039

SEU – radiation – DRAM – SEFI
PACS 85.42