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Articles dans des revues avec comité de lecture

Journal of Crystal Growth 336 (2011) 77-81

Nitrogen reaction with silicon: Investigation of Si undercooling and Si3N4 growth

Mickael Beaudhuin1, 2, 3, kader zaidat1, Thierry Duffar1, Msutapha Lemiti2

The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1 K when the concentration of nitrogen in the solidified droplet increases from 0 to 600 ppmw. Several a- and b-Si3N4morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature.

1 :	SIMAP - Science et Ingénierie des Matériaux et Procédés
2 :	INL - Institut des Nanotechnologies de Lyon - Site de l'INSA
3 :	ICG ICMMM - Institut Charles Gerhardt - Institut de Chimie Moléculaire et des Matériaux de Montpellier

Mots Clés : Nucleation – Solidfication – Growth from melt – Nitride – Semiconducting Silicon

hal-00657958, version 1

http://hal.archives-ouvertes.fr/hal-00657958

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Contributeur : Mickael Beaudhuin <>

Soumis le : Lundi 9 Janvier 2012, 15:39:02

Dernière modification le : Mardi 24 Avril 2012, 19:48:37