158 articles – 194 Notices  [english version]
Fiche détaillée Articles dans des revues avec comité de lecture
IEEE Transactions on Circuits and Systems (2007) Vol. 54, No. 11, pp. 2365-2379, November 2007
CNTFET Modeling and Reconfigurable Logic-Circuit Design
Ian O'Connor1, Junchen Liu1, Frederic Gaffiot1, Fabien Prégaldiny2, C. Lallement3, Cristell Maneux4, Johnny Goguet4, Sebastien Fregonese4, Thomas Zimmer4, L. Anghel5, 6, 7, T. Dang5, R. Leveugle5, 8, 9

This paper examines aspects of design technology required to explore advanced logic-circuit design using carbon nanotube field-effect transistor (CNTFET) devices. An overview of current types of CNTFETs is given and highlights the salient characteristics of each. Compact modeling issues are addressed and new models are proposed implementing: 1) a physics-based calculation of energy conduction sub-band minima to allow a realistic analysis of the impact of CNT helicity and radius on the dc characteristics; 2) descriptions of ambipolar behavior in Schottky-barrier CNTFETs and ambivalence in double-gate CNTFETs (DG-CNTFETs). Using the available models, the influence of the parameters on the device characteristics were simulated and analyzed. The exploitation of properties specific to CNTFETs to build functions inaccessible to MOSFETs is also described, particularly with respect to the use of DG-CNTFETs in fine-grain reconfigurable logic.
1 :  INL - Institut des nanotechnologies de Lyon - Site d'Ecully
2 :  PHASE (CNRS/STIC UPR 292)
3 :  InESS - Institut d'Electronique du Solide et des Systèmes
4 :  IMS - Laboratoire de l'intégration, du matériau au système
5 :  TIMA - Techniques of Informatics and Microelectronics for integrated systems Architecture
6 :  LPCS - Laboratoire de Physique des Composants à Semiconducteurs
7 :  UBP - University Politehnica of Bucharest
8 :  CSI - CSI, INPG, Grenoble
9 :  CSI - CSI, Inst. Nat. Polytech. de Grenoble, France