155 articles – 192 references  [version française]
Short view Article in peer-reviewed journal
Carbon reaction with levitated silicon - Experimental and thermodynamic approaches
Beaudhuin M. et al
Materials Chemistry and Physics 133 (2012) 284-288 - http://hal.archives-ouvertes.fr/hal-00679550
M. Beaudhuin ()1, 2, G. Chichignoud1, P. Bertho1, T. Duffar1, M. Lemiti3, K. Zaidat1
1:  SIMaP - Science et Ingénierie des Matériaux et Procédés
http://simap.grenoble-inp.fr/
CNRS : UMR5266 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG)
1130 rue de la Piscine, BP 75 38402 Saint Martin D'Hères
France
2:  ICG ICMMM - Institut Charles Gerhardt - Institut de Chimie Moléculaire et des Matériaux de Montpellier
http://www.icgm.fr/
CNRS : UMR5253 – Université Montpellier I – Université Montpellier II - Sciences et techniques – Ecole Nationale Supérieure de Chimie de Montpellier
Bâtiment 15 - CC003 Place Eugène Bataillon - 34095 Montpellier cedex 5
France
3:  INL - Institut des Nanotechnologies de Lyon - Site de l'INSA
http://inl.cnrs.fr
CNRS : UMR5270 – Ecole Centrale de Lyon – Institut National des Sciences Appliquées [INSA] - Lyon – Université Claude Bernard - Lyon I (UCBL)
7, avenue Jean Capelle 69621 VILLEURBANNE cedex
France
Chemical Sciences/Cristallography
Carbon reaction with levitated silicon - Experimental and thermodynamic approaches
Metallurgical grade silicon (MG-Si) has become a new source of raw material for the photovoltaic industry. The use of this material as an alternative feed stock has however introduced phenomena that are detrimental to both the yield of the manufacturing process and the performance of the photovoltaic cells produced. This is mainly related to the presence of carbon, which precipitates to silicon carbide (SiC) in the ingot. This article focuses on the effect of carbon on silicon nucleation. Statistical experimental results of silicon nucleation are obtained as a function of carbon concentration and are presented and compared to thermodynamic calculations.
English

Materials Chemistry and Physics
international
2012
133
284-288

Carbide – Semiconductors – Precipitation – Nucleation
EPM