155 articles – 192 references  [version française]
Short view Article in peer-reviewed journal
Nitrogen reaction with silicon: Investigation of Si undercooling and Si(3)N(4) growth.
Beaudhuin M. et al
Journal of Crystal Growth 336, 1 (2011) 77-81 - http://hal.archives-ouvertes.fr/hal-00664702
M. Beaudhuin1, K. Zaidat1, T. Duffar1, M. Lemiti2
1:  SIMaP - Science et Ingénierie des Matériaux et Procédés
http://simap.grenoble-inp.fr/
CNRS : UMR5266 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG)
1130 rue de la Piscine, BP 75 38402 Saint Martin D'Hères
France
2:  INL - Institut des nanotechnologies de Lyon - Site d'Ecully
CNRS : UMR5270 – Université Claude Bernard - Lyon I (UCBL) – Institut National des Sciences Appliquées [INSA] - Lyon – Ecole Centrale de Lyon
bat. 7 36 Av Guy de Collongue - 163 69131 ECULLY CEDEX
France
Chemical Sciences/Material chemistry
Nitrogen reaction with silicon: Investigation of Si undercooling and Si(3)N(4) growth.
The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1 K when the concentration of nitrogen in the solidified droplet increases from 0 to 600 ppmw. Several alpha- and beta-Si(3)N(4) morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature. (C) 2011 Elsevier B.V. All rights reserved.
English

Journal of Crystal Growth
international
2011
336
1
77-81

EPM