| Institut des nanotechnologies de Lyon |  |
| Institut des nanotechnologies de Lyon | |
| Detailed view | Article in peer-reviewed journal |
 |
| Journal of Crystal Growth 336, 1 (2011) 77-81 |
|
|
| Nitrogen reaction with silicon: Investigation of Si undercooling and Si(3)N(4) growth. |
|
|
| M. Beaudhuin1K. Zaidat1T. Duffar1M. Lemiti2 |
|
|
|
| The interaction of nitrogen with liquid and solid silicon at high temperature is investigated in an electromagnetic levitation set-up. It is shown that the nucleation undercooling of Si decreases monotonically from 300 to 1 K when the concentration of nitrogen in the solidified droplet increases from 0 to 600 ppmw. Several alpha- and beta-Si(3)N(4) morphologies are observed and their growth conditions are linked to the various stages of the Si droplet cooling down. It follows that electromagnetic levitation is a valuable tool for investigation of the chemical behavior of highly reactive liquids at high temperature. (C) 2011 Elsevier B.V. All rights reserved. |
|
|
|
|
|
|
|
|
|
| 1: | SIMAP - Science et Ingénierie des Matériaux et Procédés |
|
|
| 2: | INL - Institut des nanotechnologies de Lyon - Site d'Ecully |
|
|
|
|
|
|
|
| hal-00664702, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00664702 | |
| oai:hal.archives-ouvertes.fr:hal-00664702 | |
| From: Michel Pons | |
| Submitted on: Tuesday, 31 January 2012 12:50:23 | |
| Updated on: Tuesday, 31 January 2012 12:50:23 | |