| Author(s) |
Gang Niu1, Guillaume Saint-Girons ( )1, Bertrand Vilquin ()1, Gabriel Delhaye ()2, Jean-Luc Maurice ()3, Claude Botella ()1, Yves Robach ()1, Guy Hollinger ()1 |
| Laboratory |
|
| Research team: |
 |
Surfaces et interfaces |
| Subject |
Physics/Condensed Matter/Materials Science
|
| Title |
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation |
| Abstract |
The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML. |
| Fulltext language |
English |
|
| DOI |
10.1063/1.3193548 |
| Journal |
Applied Physics Letters |
| Audience |
international |
| Publication date |
2009-08 |
| Volume |
95 |
| Issue |
6 |
| Page, identifiant, ... |
2902 |
|
| Keyword(s) |
Other materials – Molecular – atomic – ion – and chemical beam epitaxy – Deformation – plasticity – and creep – Plasticity and superplasticity – Elasticity and anelasticity – stress-strain relations – Cold working – work hardening – annealing – post-deformation annealing – quenching – tempering recovery – and crystallization |
|
