158 articles – 194 references  [version française]
Short view Article in peer-reviewed journal
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
Niu G. et al
Applied Physics Letters 95, 6 (2009) 2902 - http://hal.archives-ouvertes.fr/hal-00663481
Gang Niu1, Guillaume Saint-Girons ()1, Bertrand Vilquin ()1, Gabriel Delhaye ()2, Jean-Luc Maurice ()3, Claude Botella ()1, Yves Robach ()1, Guy Hollinger ()1
1:  INL - Institut des nanotechnologies de Lyon - Site d'Ecully
CNRS : UMR5270 – Université Claude Bernard - Lyon I (UCBL) – Institut National des Sciences Appliquées [INSA] - Lyon – Ecole Centrale de Lyon
bat. 7 36 Av Guy de Collongue - 163 69131 ECULLY CEDEX
2:  IPR - Institut de Physique de Rennes
Université de Rennes 1 – CNRS : UMR6251
Bâtiment 11A F-35042 Rennes
3:  LPICM - Laboratoire de physique des interfaces et des couches minces
CNRS : UMR7647 – Polytechnique - X
bat. 408 Route de Saclay 91128 PALAISEAU CEDEX
Surfaces et interfaces
Physics/Condensed Matter/Materials Science
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

Applied Physics Letters

Other materials – Molecular – atomic – ion – and chemical beam epitaxy – Deformation – plasticity – and creep – Plasticity and superplasticity – Elasticity and anelasticity – stress-strain relations – Cold working – work hardening – annealing – post-deformation annealing – quenching – tempering recovery – and crystallization