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Article in peer-reviewed journal

Applied Physics Letters 95, 6 (2009) 2902

Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

Gang Niu1, Guillaume Saint-Girons1, Bertrand Vilquin1, Gabriel Delhaye2, Jean-Luc Maurice3, Claude Botella1, Yves Robach1, Guy Hollinger1

The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

1:	INL - Institut des nanotechnologies de Lyon - Site d'Ecully
2:	IPR - Institut de Physique de Rennes
3:	LPICM - Laboratoire de physique des interfaces et des couches minces

Research team: Surfaces et interfaces

Keyword(s) : Other materials – Molecular – atomic – ion – and chemical beam epitaxy – Deformation – plasticity – and creep – Plasticity and superplasticity – Elasticity and anelasticity – stress-strain relations – Cold working – work hardening – annealing – post-deformation annealing – quenching – tempering recovery – and crystallization

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From: Dorothée Destouches <>

Submitted on: Friday, 27 January 2012 11:45:08

Updated on: Monday, 17 September 2012 09:35:05