160 articles – 197 references  [version française]
Short view Conference proceedings
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Oliviero E. et al
in Proc. of the 6th European Conference on Silicon Carbide and Related Materials - ECSCRM, Newcastle upon Tyne : United Kingdom (2006) - http://hal.archives-ouvertes.fr/hal-00368931
Erwan Oliviero ()1, Mihai Lazar ()1, Heu Vang ()1, Christiane Dubois2, Pierre Cremilleu3, Jean-Louis Leclercq3, Jacques Dazord4, Dominique Planson ()1
1:  Ampère
http://www.ampere-lab.fr/
CNRS : UMR5005 – Université Claude Bernard - Lyon I (UCBL) – Institut National des Sciences Appliquées [INSA] - Lyon – Ecole Centrale de Lyon
Bât. 721 LA DOUA 43, boulev. du 11 novembre 1918 69622 VILLEURBANNE CEDEX
France
2:  LPM - Laboratoire de physique de la matière
http://www.insa-lyon.fr/Laboratoires/LPM/
CNRS : UMR5511 – Institut National des Sciences Appliquées [INSA] - Lyon
Bâtiment Blaise Pascal 7 avenue Jean Capelle 69621 VILLEURBANNE CEDEX
France
3:  INL - Institut des nanotechnologies de Lyon - Site d'Ecully
CNRS : UMR5270 – Université Claude Bernard - Lyon I (UCBL) – Institut National des Sciences Appliquées [INSA] - Lyon – Ecole Centrale de Lyon
bat. 7 36 Av Guy de Collongue - 163 69131 ECULLY CEDEX
France
4:  LMI - Laboratoire des Multimatériaux et Interfaces
http://lmi.cnrs.fr
CNRS : UMR5615 – Université Claude Bernard - Lyon I (UCBL)
bat. 731 43 Bvd du 11 Novembre 1918 69622 VILLEURBANNE CEDEX
France
Engineering Sciences/Electric power
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
6H and 4H-SiC epilayers were Al-implanted at room temperature with multiple energies (ranging from 25 to 300 keV) in order to form p-type layers with an Al plateau concentration of 4.5×1019 cm-3 and 9×1019 cm-3. Post-implantation annealing were performed at 1700 or 1800 °C up to 30 min in Ar ambient. During this process, some samples were encapsulated with a graphite (C) cap obtained by thermal conversion of a spin-coated AZ5214E photoresist. From Atomic Force Microscope measurements, the roughness is found to increase drastically with annealing temperature for unprotected samples while the C capped samples show a preservation of their surface states even for the highest annealing temperature. After 1800°C/30 min annealing, the RMS roughness is 0.46 nm for the lower fluence implanted samples, slightly higher than for unimplanted samples (0.31 nm). Secondary Ion Mass Spectroscopy measurements confirm that the C cap was totally removed from the SiC surface. The total Al-implanted fluence is preserved during postimplantation annealing. A redistribution of the Al dopants is observed at the surface which might be attributed to Si vacancy-enhanced diffusion. An accumulation peak is also observed after annealing at 0.29 9m, depth corresponding to the amorphous/crystalline interface that was determined on the as-implanted samples by Rutherford Backscattering Spectroscopy in channeling mode. The redistribution of the dopants has an impact on their electrical activation. A lower sheet resistance (Rsh= 8 k_) is obtained for samples annealed without capping than for samples annealed with C capping (Rsh= 15 k_ ).
English

10.4028/www.scientific.net/MSF.556-557.611
Materials Science Forum
Proc. of the 6th European Conference on Silicon Carbide and Related Materials
international
2007-09-15
556-557
611-614

ECSCRM
2006-09-03
2006-09-07
Newcastle upon Tyne
United Kingdom

Graphite cap – Post-implantation annealing – Dopants – Diffusion – Ion implantation