Detailed view

Article in peer-reviewed journal

Superlattices and Microstructures 40, 4-6 (2006) 626-631

Ni-Al ohmic contact to p-type 4H-SiC

Heu Vang1, 2, Mihai Lazar1, 2, Pierre Brosselard1, 2, Christophe Raynaud1, 2, Pierre Cremilleu3, Jean-Louis Leclercq3, Jean-Marie Bluet4, Sigo Scharnholz, Dominique Planson1, 2

Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in argon atmosphere at 400 degrees C for 1 min, followed by an annealing at 1000 degrees C for 2 min. In order to extract the specific contact resistance, TLM test structures were fabricated. A specific contact resistance of 3 x 10(-5) Omega cm(2) was obtained reproducibly on Al2+ implanted p-type layers, having a doping concentration of 1 x 10(19) cm(-3). The lowest specific contact resistance value measured amounts to 8 x 10(-6) Omega cm(2).

1:	Ampère
2:	CEGELY - Centre de génie électrique de Lyon
3:	INL - Institut des nanotechnologies de Lyon - Site d'Ecully
4:	LPM - Laboratoire de physique de la matière

Keyword(s) : SiC – ohmic contact – p-type – Ni/Al – specific resistance – AL/TI CONTACTS – TITANIUM

hal-00141426, version 1

http://hal.archives-ouvertes.fr/hal-00141426

oai:hal.archives-ouvertes.fr:hal-00141426

From: Publications Ampère <>

Submitted on: Thursday, 12 April 2007 17:54:54

Updated on: Monday, 15 June 2009 18:27:20