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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC Laariedh F. et al Dans Proc. of the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications - HeteroSiC and WASMPE, France (2011) [hal-00661507 - version 1]

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Oliviero E. et al Dans Proc. of the 6th European Conference on Silicon Carbide and Related Materials - ECSCRM, Royaume-Uni (2006) [hal-00368931 - version 1]

1.2 kV pin diodes with SiCrystal epiwafer Vang H. et al Dans Proc. of the 6th European Conference on Silicon Carbide and Related Materials - ECSCRM, Royaume-Uni (2006) [hal-00358819 - version 1]

Deep SiC etching with RIE Lazar M. et al Superlattices and Microstructures 40, 4-6 (2006) 388-392 [hal-00179458 - version 1]

Ni-Al ohmic contact to p-type 4H-SiC Vang H. et al Superlattices and Microstructures 40, 4-6 (2006) 626-631 [hal-00141426 - version 1]