160 articles – 197 references  [version française]
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fulltext access Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX
Abi Tannous T. et al
Symposium de Génie Électrique 2014, France (2014) [hal-01065327 - version 1]
Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC
Laariedh F. et al
Dans Proc. of the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications - HeteroSiC and WASMPE, France (2011) [hal-00661507 - version 1]
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Oliviero E. et al
Dans Proc. of the 6th European Conference on Silicon Carbide and Related Materials - ECSCRM, Royaume-Uni (2006) [hal-00368931 - version 1]
1.2 kV pin diodes with SiCrystal epiwafer
Vang H. et al
Dans Proc. of the 6th European Conference on Silicon Carbide and Related Materials - ECSCRM, Royaume-Uni (2006) [hal-00358819 - version 1]
Deep SiC etching with RIE
Lazar M. et al
Superlattices and Microstructures 40, 4-6 (2006) 388-392 [hal-00179458 - version 1]
Ni-Al ohmic contact to p-type 4H-SiC
Vang H. et al
Superlattices and Microstructures 40, 4-6 (2006) 626-631 [hal-00141426 - version 1]