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Ferroelectric BaTiO3 strained on SrTiO3(001) : Abnormal anion displacements evidenced by X-ray photoelectron diffraction (XPD) El Kazzi M. et al E-MRS, France (2010) [hal-00668621 - version 1]

Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation Niu G. et al Applied Physics Letters 95, 6 (2009) 2902 [hal-00663481 - version 1]

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) Cordier Y. et al Physical Status Solidi (c) 6, S2 (2009) S1016-S1019 [hal-00329478 - version 1]

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) Cordier Y. et al International Workshop on Nitride Semiconductors, Suisse (2008) [hal-00540445 - version 1]

Passivation de matériaux et composants III-V par plasma ECR d'azote Farih N. et al JNMO'08 : 12èmes Journées Nano Micro et Optoélectronique, France (2008) [hal-00288425 - version 1]