158 articles – 194 references  [version française]
Detailed view Article in peer-reviewed journal
Materials Chemistry and Physics 133 (2012) 284-288
Carbon reaction with levitated silicon - Experimental and thermodynamic approaches
M. Beaudhuin1, 2, G. Chichignoud1, P. Bertho1, T. Duffar1, M. Lemiti3, K. Zaidat1

Metallurgical grade silicon (MG-Si) has become a new source of raw material for the photovoltaic industry. The use of this material as an alternative feed stock has however introduced phenomena that are detrimental to both the yield of the manufacturing process and the performance of the photovoltaic cells produced. This is mainly related to the presence of carbon, which precipitates to silicon carbide (SiC) in the ingot. This article focuses on the effect of carbon on silicon nucleation. Statistical experimental results of silicon nucleation are obtained as a function of carbon concentration and are presented and compared to thermodynamic calculations.
1:  SIMaP - Science et Ingénierie des Matériaux et Procédés
2:  ICG ICMMM - Institut Charles Gerhardt - Institut de Chimie Moléculaire et des Matériaux de Montpellier
3:  INL - Institut des Nanotechnologies de Lyon - Site de l'INSA
Carbide – Semiconductors – Precipitation – Nucleation