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Hdr Année : 2012

Downscaling silicon resonant MEMS and NEMS sensors: devices, transduction, non-linear dynamics and applications

Miniaturisation des capteurs MEMS et NEMS résonants en silicium : dispositifs, transduction, dynamique non-linéaire et applications

Résumé

A large part of the activities described in what follows circle around a small number of questions: what is downscaling bene cial to in sensing? What is the technical and scienti c price one has to pay for downscaling? From a general point of view and at a very di erent scale, those are considerations close to the ITRS roadmap for More Moore in the MOS eld, and the tremendous research e orts and scienti c challenges demanded by the continuity of the Moore's law. Although the sensing eld may be included in the so-called More-Than-Moore movement, its evolution has been much less formalized than its MOS counterpart. This document will try to show how my activities modestly contributed to this dispersed e ort. As an introduction, a rst study will be brie y described in this chapter, study which was seminal for those activities as well as which of the group. A number of scienti c issues appear along this study: device physics, device structure, transduction, noise modelling, non-linearities. It is a good way to introduce how the document is structured: this is the work of a team, and the at least partially chronological order is nothing but a logical way to describe how this work have been part of the evolution of a team's work.
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Dates et versions

tel-00740800 , version 1 (11-10-2012)

Identifiants

  • HAL Id : tel-00740800 , version 1

Citer

Sébastien Hentz. Downscaling silicon resonant MEMS and NEMS sensors: devices, transduction, non-linear dynamics and applications. Micro and nanotechnologies/Microelectronics. INSA de Lyon, 2012. ⟨tel-00740800⟩
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