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| Detailed view | PhD thesis |
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| Ecole Polytechnique X (2010-05-21), Lucia Reining; JF Guillemoles; S. Botti (Dir.) |
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| Attached file list to this document: | |||||
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| Ab initio Calculations of the Electronic Properties of CuIn(S,Se)2 and other Materials for Photovoltaic Applications |
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| Julien Vidal1, 2 |
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| In the first chapter of this thesis, we will present the principle of PV solar cells with a special emphasis on the CIS absorber. In the second and third chapter, we will describe the methods we used to treat the many body problem. Finally, in the last chapter, we will apply methods presented in chapter 2 and 3 to CIS and pay a particular attention to the dependence of the bandgap on the anion displacement and the concentration of defects. |
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| 1: | LSI - Laboratoire des Solides Irradiés |
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| 2: | IRDEP - INSTITUT DE RECHERCHE ET DEVELOPPEMENT SUR L'ENERGIE PHOTOVOLTAÏQUE |
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| Cellules solaires – Énergie photovoltaïque – CIGS |
| Ab initio Calculations of the Electronic Properties of CuIn(S,Se)2 and other Materials for Photovoltaic Applications |
| In the first chapter of this thesis, we will present the principle of PV solar cells with a special emphasis on the CIS absorber. In the second and third chapter, we will describe the methods we used to treat the many body problem. Finally, in the last chapter, we will apply methods presented in chapter 2 and 3 to CIS and pay a particular attention to the dependence of the bandgap on the anion displacement and the concentration of defects. |
| GW method – CIGS |
| tel-00544395, version 1 | |
| http://tel.archives-ouvertes.fr/tel-00544395 | |
| oai:tel.archives-ouvertes.fr:tel-00544395 | |
| From: Jean Francois Guillemoles | |
| Submitted on: Wednesday, 8 December 2010 01:06:07 | |
| Updated on: Tuesday, 24 May 2011 16:14:13 | |
